plasma etching processes for interconnect realization in vlsi

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Plasma Etching Processes for Interconnect Realization in VLSI
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Publisher : Elsevier
Release Date :
ISBN 10 : 0081005903
Pages : 128 pages
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This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions. This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes

Plasma Etching Processes for Interconnect Realization in VLSI

This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions. This book focuses on back end of line (BEOL)

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Plasma Etching Processes for CMOS Devices Realization

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices,

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Plasma processing of materials is a critical technology to several of the largest manufacturing industries in the world--electronics, aerospace, automotive, steel, biomedical, and toxic waste management. This book describes the relationship between plasma processes and the many industrial applications, examines in detail plasma processing in the electronics industry, highlights the

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Download or read online VLSI Electronics written by Norman G. Einspruch, published by Unknown which was released on 1981. Get VLSI Electronics Books now! Available in PDF, ePub and Kindle.

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Fabrication of Two dimensional and Three dimensional Photonic Crystal Devices for Applications in Chip scale Optical Interconnects

To date, the realization of chip-scale optical interconnects has been inhibited by the lack of a device technology that can provide optical functionality at a scale commensurate with integrated circuits. To overcome this limitation, I propose the realization of an "optical superhighway" as an alternative interconnect paradigm for next-generation integrated

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Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at

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